MZ-V9E1T0 – Samsung 1TB PCI Express NVMe TLC M.2 2280 SSD
Description
Samsung MZ-V9E1T0 1TB Triple-Level Cell PCI Express NVMe 4.0 x4 M.2 2280 Solid State Drive
Samsung 990 EVO MZ-V9E1T0 offers 1TB storage with V-NAND TLC and Host Memory Buffer (HMB) for efficient data management. Featuring PCI Express NVMe 5.0 x2 interface delivers read/write speeds up to 7450/6900 MB/s. Compact M.2 2280 form factor enables easy installation and efficient space use.
AES 256-bit encryption
Samsung in-house controller
MTBF of 1.5 million hours
TCG/Opal V2.0 and IEEE1667 standards
Supports TRIM, garbage collection, and S.M.A.R.T
General Information
| Product Type | Solid State Drive |
|---|
Technical Information
| Storage Capacity | 1 |
|---|---|
| Flash Memory Technology | Triple-Level Cell |
| Sequential Read | 5000 |
| Random Read | 20K |
| Random Write | 90K |
| Sequential Write | 4200 |
Interfaces/Ports
| Drive Interface | PCI Express NVMe |
|---|---|
| Interface Standard | PCI Express NVMe 4.0 x4 |
Physical Characteristics
| Form Factor | M.2 2280 |
|---|
Additional information
| Product Type |
Solid State Drive |
|---|---|
| Storage Capacity |
1 |
| Drive Interface |
PCI Express NVMe |
| Interface Standard |
PCI Express NVMe 4.0 x4 |
| Flash Memory Technology |
Triple-Level Cell |
| Form Factor |
M.2 2280 |
| Sequential Read |
5000 |
| Random Read |
20K |
| Random Write |
90K |
| Sequential Write |
4200 |
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